LITHOGRAPHY EXPOSURE MASK DERIVED FROM NANOCRYSTAL PRECURSORS AND A METHOD OF MANUFACTURING THE SAME

摘要

A high resolution exposure mask suitable for x-ray lithography is described in the present invention and a method of manufacturing the same. Nanocrystals of electron dense materials, preferably as a colloidal solution are applied to a surface of a low electron density substrate, so as to form features as fine as about 10 nanometers. The reduced melting and sintering temperatures associated with nanocrystals, compared with the bulk material allows for the use of more moderate processing conditions. Lessened interfacial stress between dissimilar layers results.