发明名称 THIN FILM FERROELECTRIC CAPACITORS HAVING IMPROVED MEMORY RETENTION THROUGH THE USE OF ESSENTIALLY SMOOTH BOTTOM ELECTRODE STRUCTURES
摘要 <p>A ferroelectric thin film capacitor (400) has smooth electrodes (412, 420) permitting comparatively stronger polarization, less fatigue, and less imprint, as the ferroelectric capacitor ages. The smooth electrode surfaces (414, 428) are produced by carefully controlled drying, soft baking, and annealing conditions.</p>
申请公布号 WO1998039801(A1) 申请公布日期 1998.09.11
申请号 IB1998000515 申请日期 1998.03.03
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