发明名称 |
Method of fabricating a semiconductor device |
摘要 |
A method of making a semiconductor device having fuses for repair, using a etch stop film to form an insulating film having a constant thickness. The etch stop film is patterned and then removed. Remaining portions of the insulating film have a constant thickness for each fuse box, thereby improving fabricating process yield and reliability. |
申请公布号 |
GB9814893(D0) |
申请公布日期 |
1998.09.09 |
申请号 |
GB19980014893 |
申请日期 |
1998.07.10 |
申请人 |
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. |
发明人 |
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分类号 |
H01L27/04;H01L21/306;H01L21/82;H01L21/822;H01L23/525 |
主分类号 |
H01L27/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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