发明名称 Method of fabricating a semiconductor device
摘要 A method of making a semiconductor device having fuses for repair, using a etch stop film to form an insulating film having a constant thickness. The etch stop film is patterned and then removed. Remaining portions of the insulating film have a constant thickness for each fuse box, thereby improving fabricating process yield and reliability.
申请公布号 GB9814893(D0) 申请公布日期 1998.09.09
申请号 GB19980014893 申请日期 1998.07.10
申请人 HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. 发明人
分类号 H01L27/04;H01L21/306;H01L21/82;H01L21/822;H01L23/525 主分类号 H01L27/04
代理机构 代理人
主权项
地址