| 摘要 |
<p>A thin-film transistor includes a substrate 41 and a gate 49 including a double-layered structure having first 43 and second 45 metal layers, the first metal layer 43 being wider than the second metal layer 45 by about 1 to 4 Ám. A method of making such a thin film transistor includes the steps of: depositing a first metal layer 43 on a substrate 41, depositing a second metal layer 45 directly on the first metal layer 43; forming a photoresist having a designated width on the second metal layer 45; patterning the second metal layer 45 by isotropic etching using the photoresist as a mask; patterning the first metal layer 43 by means of an anisotropic etching using the phororesist as a mask, the first metal layer 43 being etched to have the designated width, thus forming a gate 49 having a laminated structure of the first 43 and second metal layers 45; and removing the photoresist. Alternatively, the first and second metal layers 43,45 can be anistropically etched together, the second metal layer 45 being subsequently isotropically etched further, or both layers 43,45 can be isotropically etched together but with layer 45 being etched more quickly than layer 43.</p> |
