发明名称 |
Power mosfet with overcurrent and over-temperature protection and control circuit decoupled from body diode |
摘要 |
An NPN transistor is added to the chip of a power integrated circuit which contains a power MOSFET and a control circuit in a common chip. The NPN transistor is coupled between the P well containing the integrated circuit components and the N type substrate of the chip and is turned on in response to the forward biasing of the body diode Of the power MOSFET. A depletion mode control MOSFET transistor is coupled, through a fault latch circuit, to the power MOSFET gate and is in series with a capacitor. The node between the power MOSFET gate and capacitor is decoupled from the N type substrate when the bipolar transistor turns on, to turn off the power MOSFET. |
申请公布号 |
GB2292834(B) |
申请公布日期 |
1998.09.09 |
申请号 |
GB19950017148 |
申请日期 |
1995.08.22 |
申请人 |
* INTERNATIONAL RECTIFIER CORPORATION |
发明人 |
BRUNO C * NADD;TALBOTT M * HOUK |
分类号 |
H01L29/417;H01L21/822;H01L21/8234;H01L27/02;H01L27/04;H01L27/088;H01L29/78;H03K17/08;H03K17/082;(IPC1-7):H01L27/04 |
主分类号 |
H01L29/417 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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