发明名称 |
Passivation capping layer for ohmic contact in ii-vi semiconductor light transducing device |
摘要 |
A II-VI semiconductor device includes a stack of semiconductor layers. An ohmic contact is provided that electrically couples to the stack. The ohmic contact has an oxidation rate when exposed to an oxidizing substance. A passivation capping layer overlies the ohmic contact and has an oxidation rate that is less than the oxidation rate of the ohmic contact. |
申请公布号 |
AU4643897(A) |
申请公布日期 |
1998.09.09 |
申请号 |
AU19970046438 |
申请日期 |
1997.06.25 |
申请人 |
MINNESOTA MINING AND MANUFACTURING COMPANY |
发明人 |
FEN-REN CHIEN;MICHAEL A HAASE;THOMAS J. MILLER |
分类号 |
H01L31/02;H01L33/28;H01L33/40;H01L33/44;H01S5/028;H01S5/042;H01S5/347 |
主分类号 |
H01L31/02 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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