发明名称 |
Aluminum scandium alloy interconnection |
摘要 |
An aluminum interconnection of the invention contains scandium as an impurity, so that the hardness of the interconnection in improved. Moreover, after a thin Al-Sc alloy film is formed, an annealing is performed 80 as to make the crystal grain larger than the width of the interconnection. The resulting Al interconnection has a high resistance against a stressmigration or electromigration, when a current stress in applied at a practical temperature in an LSI. This greatly contributes to the fabrication of a semiconductor device having a fine structure.
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申请公布号 |
US5804879(A) |
申请公布日期 |
1998.09.08 |
申请号 |
US19960653116 |
申请日期 |
1996.05.24 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
OGAWA, SHINICHI;NISHIMURA, HIROSHI;YAMADA, TATSUYA |
分类号 |
H01L21/28;H01L21/768;H01L23/532;(IPC1-7):H01L23/48;H01L23/52;H01L25/40 |
主分类号 |
H01L21/28 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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