Semiconductor laser

摘要

A semiconductor device includes a p type InP substrate with a (001) surface; a mesa structure formed by dry etching, extending along a <110> direction, including semiconductor layers, having (1+E,ovs 1+EE 0) side surfaces, and a height Hm; and mesa burying layers including a p type InP burying layer on the (1+E,ovs 1+EE 0) side surfaces and the (001) surface, the p type InP burying layer having a thickness Dp, and an n type InP burying layer on the p type InP burying layer. An angle between a (111)B surface and (001) surface is theta 111, the growth rates on the (1+E,ovs 1+EE 0) side surfaces and on the (001) surface are respectively Rg(1+E,ovs 1+EE 0) and Rg(001), an angle theta is tan theta =Rg(1+E,ovs 1+EE 0)/Rg(001) and the critical thickness Dn of the n type InP burying layer on the (001) surface when the n type InP burying layer is not grown on the (111)B surface is The n type InP burying layer has a thickness D