发明名称 Aluminum nitride junction structure
摘要 The present invention relates to a novel aluminum nitride junction structure, which is a aluminum nitride junction structure in which the junction portion between the base materials of a sintered product of aluminum nitride comprises the sintered product of aluminum nitride, and exhibits a heat conductivity of not smaller than 95% of the heat conductivity of the base materials. More specifically, the invention relates to an aluminum nitride junction structure which does not almost permit the heat conductivity to drop at the junction portion and features a high junction strength, and to a method of producing the aluminum nitride junction structure.
申请公布号 US5804289(A) 申请公布日期 1998.09.08
申请号 US19960684095 申请日期 1996.07.19
申请人 TOKUYAMA CORPORATION 发明人 WAKAMATSU, TETSUO
分类号 C04B37/00;F28F21/04;(IPC1-7):C04B35/58 主分类号 C04B37/00
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