| 摘要 |
For generating uniform high-density plasma over a large area with a low power thereby achieving high-quality plasma process at a high speed even at a low temperature, there is provided a microwave plasma processing apparatus comprising a plasma generation chamber having a periphery separated from the ambient air by a dielectric member, microwave introduction means utilizing an endless annular wave guide tube provided around the plasma generation chamber and provided with plural slots, a processing chamber connected to the plasma generation chamber, support means for a substrate to be processed provided in the processing chamber, gas introduction means for the plasma generation chamber and the processing chamber, and evacuation means for the plasma generation chamber and the processing chamber, wherein the circumferential length Lg of the endless annular wave guide tube, the wavelength lambda g of the microwave in the endless annular wave guide tube, the circumferential length Ls of the dielectric member and the wavelength lambda s of the surface wave propagating in the dielectric material substantially satisfy a relationship:Ls/ lambda s=(2n1)Lg/ lambda gwherein n is 0 or a natural number.
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