发明名称 |
Method of forming transparent and conductive ultrathin films |
摘要 |
The invention provides a method of producing tranparent and conductive ultrathin films of metal carbide or metal nitride on a glass, ceramics or organic polymer substrate, which comprises the steps of exciting a surface of said substrate by irradiating said surface with a carbon or nitrogen ion beam; simultaneously vapor-depositing a transition metal onto said surface to form a carbide or nitride layer; and terminating the excitation and the vapor-deposition when the thickness of the metal carbide or nitride layer is in the range of 1 nm to 50 nm, and the light permeability of the metal carbide or nitride layer is in the range of 30% to 90%, wherein the conductivity of the metal carbide or nitride layer is in the range of 1 k OMEGA / &squ& To 100 k OMEGA / &squ& .
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申请公布号 |
US5804255(A) |
申请公布日期 |
1998.09.08 |
申请号 |
US19960608673 |
申请日期 |
1996.02.29 |
申请人 |
AGENCY OF INDUSTRIAL SCIENCE AND TECHNOLOGY |
发明人 |
KIUCHI, MASATO;CHAYAHARA, AKIYOSHI |
分类号 |
C03C17/09;C03C17/22;C04B41/50;C04B41/51;C04B41/87;C04B41/88;C08J7/06;C23C14/00;C23C14/02;C23C14/06;C23C14/18;C23C14/20;C23C14/22;G02F1/1343;H01J29/86;H01J29/88;(IPC1-7):B05D3/06;B05D5/06 |
主分类号 |
C03C17/09 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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