发明名称 Chemical vapor deposition apparatus
摘要 A process for forming a deposited film on a substrate according to the chemical vapor deposition method comprises previously forming excited species of a gas phase compound containing atoms which become constituents constituting said deposited film, supplying the excited species onto the surface of said substrate and effecting photoirradiation on said substrate surface, thereby forming the deposited film through the surface reaction.
申请公布号 US5803974(A) 申请公布日期 1998.09.08
申请号 US19950479857 申请日期 1995.06.07
申请人 CANON KABUSHIKI KAISHA 发明人 MIKOSHIBA, NOBUO;OHMI, TADAHIRO;TSUBOUCHI, KAZUO;MASU, KAZUYA;SUZUKI, NOBUMASA
分类号 H01L21/205;C23C16/452;C23C16/48;C23C16/50;H01L21/263;H01L21/31;(IPC1-7):C23C16/00 主分类号 H01L21/205
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