发明名称 Power semiconductor device having over-current protection
摘要 A semiconductor device having an input terminal and an output terminal includes at least one high power device for supplying output current as an output section, and over-current limiting circuits, each including a over-current detection circuit, for limiting the amount of each current flowing through a plurality of bonding wires by which the output terminal is connected to an external terminal, to a current value of a desired amount or less. Thereby, an over-current condition where the current value is over an allowable current value, is avoided and blowing the bonding wire of the device can be prevented.
申请公布号 US5804859(A) 申请公布日期 1998.09.08
申请号 US19960668233 申请日期 1996.06.21
申请人 KABUSHIKI KAISHA TOSHIBA 发明人 TAKAHASHI, HITOSHI;TAKAGI, YOSUKE
分类号 H01L21/60;H03K17/082;H03K17/12;(IPC1-7):H01L23/62 主分类号 H01L21/60
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