发明名称 |
Plasma processing apparatus and method |
摘要 |
A plasma processing apparatus includes a vacuum container accommodating a to-be-processed substrate. A vacuum discharge device discharges gas from the container, and a gas feed device feeds a gas in the container. A pair of electrodes includes one which has a concave surface for holding the substrate thereon. A high frequency power supply device supplies a high frequency power to the electrodes, a gas feed device for filling between the substrate and the electrodes with an inert gas to cool the substrate, and a holding device for pressing a side end face of the substrate in a direction along a surface of the substrate to shape the substrate into a concave while holding the substrate on the concave surface of the electrode.
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申请公布号 |
US5804089(A) |
申请公布日期 |
1998.09.08 |
申请号 |
US19950550116 |
申请日期 |
1995.10.30 |
申请人 |
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. |
发明人 |
SUZUKI, MASAKI;YAMAMOTO, SHIGEYUKI |
分类号 |
H01L21/302;H01L21/203;H01L21/205;H01L21/3065;H01L21/683;(IPC1-7):C23F1/02;C23C14/50;C23C16/00 |
主分类号 |
H01L21/302 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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