| 摘要 |
Conductive material is etched by immersing the material in a solution in which the etchant concentration is 200mM at most, preferably 100mM at most and more preferably 10mM at most, while applying an electric field. In an embodiment, anisotropic etching is achieved using a dilute solution of the etchant which in normal, concentrated form produces isotropic etching.An etchant solution is claimed in which the etchant concentration is 200mM at most, preferably 100mM at most and especially 20mM at most. Plating method for a conductive substrate comprises immersing the substrate in a solution in which the plating agent concentration is 200mM at most, while applying an electric field. In an embodiment, anisotropic plating is achieved using a plating agent which in normal concentrated form produces isotropic plating. |
