| 发明名称 |
Method for depositing titanium nitride |
| 摘要 |
<p>Golden TiN films having uniform sheet resistance are deposited from a plasma sputtering chamber by initially saturating the chamber with nitrogen using high nitrogen gas flow rates and then reducing the nitrogen gas flow rates and reducing the pressure in the chamber during the deposition step. <IMAGE></p> |
| 申请公布号 |
EP0861920(A1) |
申请公布日期 |
1998.09.02 |
| 申请号 |
EP19980301420 |
申请日期 |
1998.02.26 |
| 申请人 |
APPLIED MATERIALS, INC. |
发明人 |
NGAN, KENNY KING-TAI |
| 分类号 |
C23C14/00;C23C14/06;C23C14/34;H01L21/203;H01L21/285;(IPC1-7):C23C14/00 |
主分类号 |
C23C14/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
|
| 地址 |
|
