MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To enable annealing in an atmosphere containing halogen elements without deteriorating a channel doping effect. SOLUTION: A catalyst element for promoting crystallization is added to an amorphous silicon film containing impurity elements for threshold control, and the film is annealed to form a crystalline silicon film. Next, the film is annealed in an atmosphere containing halogen elements to subject catalyst elements to a gettering process. At this time, a compound gas containing impurity elements for threshold control is mixed into the atmosphere, whereby a chemically balanced state can be established for the impurity elements, thus preventing the impurity elements from moving into a gaseous phase.