| 摘要 |
PROBLEM TO BE SOLVED: To secure the stable operation and high yield, by a method wherein a conductor is buried in a contact hole while a silicide layer is formed on the lower part and the upper part of the conductor. SOLUTION: An insulating film 2 is deposited on a silicon substrate 1 and after forming an aperture part in the contact hole 3, a titanium film 4 is deposited on the bottom face of the contact hole 3 so as to bury the contact hole 3 with a titanium nitride film. Next, the titanium nitride film in a flat part is removed to form a titanium nitride plug 5 for selectively forming a titanium film 6 on the plug 5. Successively, a polysilicon electrode 7 introducing a specific amount of impurity is formed on the insulating film 2 and the titanium film 6. Furthermore, the titanium film 6 is phase changed into a titanium silicide film 8. Through these procedures, the stable electric characteristics can be secured. |
