| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device in which aging of a plurality of semiconductor circuits is performed in a lump under a semiconductor wafer condition, and electrical characteristics of a plurality of semiconductor circuits is individually and separately measured. SOLUTION: A semiconductor device has first and second impurity implantation regions 10 and 13 provided between adjoining two of a plurality of semiconductor circuits 1 formed on a semiconductor wafer. Each of a plurality of semiconductor circuits has a high potential-side power source pattern 14, a low potential-side power source pattern 17 and a control pattern 11. At the time of aging, the power source patterns 14 and 17 are connected in series to apply specified voltage. In addition, at the time of probing, the predetermined voltage is applied to the control pattern 11, and a specified semiconductor circuit is insulated from the other semiconductor circuit. |
