| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device which satisfies required charge holding property and is highly reliable for a long time without deterioration with time elapse. SOLUTION: This device is provided with a gate 4, first and second diffusion areas 5 and 10 for seizing the gate from both sides, and a contact hole 17 for connecting the first diffusion area 10 electrically with a lower electrode 8 of a self capacitor for accumulating charges, on a substrate 1, and when a reverse voltage Vrev is applied as a joint impressed voltage between the area 10 and the substrate 1, a leak current Ileak flows therebetween. The joint impressed voltage Vrev at the time when the leak current Ileak is represented by a formula, Ileak=Cs×(Vbit/2)×(1/T)×(1/S) (Cs: charge accumulation capacity in self capacitor; Vbit: voltage applied to a data line 12 connecting with the second area 5; T: target charge holding time; S: the first diffusion area 10) is three times or more the voltage Vbit applied to the data line 12 in room temperature. |
