| 摘要 |
PROBLEM TO BE SOLVED: To increase the element side intensity, by a method wherein PHS (planer heat sink) is formed after the formation of separating trenches on a substrate underside, while the PHS is also formed on the sides of the separating trenches for covering the semiconductor substrate side, so as to reduce the exposed part of the semiconductor substrate on the semiconductor element sides. SOLUTION: Surface separating trenches 3 are formed on a GaAs substrate 1 by etching it using a resist patterns as masks, while an element forming surface as an adhesive surface is bonded onto a glass plate 5 used as an reinforcement plate, after the formation of the surface separating trenches 3 on the substrate surface side using a wax made of a natural resin base liquid adhesive. Next, the underside separating trenches 7 are formed on the positions corresponding to the surface side separating trenches 3 not to penetrate the substrate 1 so as to form the resist patterns of photoresists 8 for the formation of the PHS serving both as grounding electrodes and a heat sink. In such a constitution, the photoresists 8 and the sides of the underside separating trenches 7 are separated by about 30μm, thereby enabling the PHS to be formed also on the semiconductor element sides for increasing the intensity thereof.
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