Ion implantation process simulation device realizing accurate interpolation of ion implatation profiles and simulation method therefor

摘要

An ion implantation process simulation device including a Dual Pearson data extracting unit (10) for generating a Dual Pearson data table (11) from ion implantation profile data, a Dual Pearson data for interpolation obtaining unit (20) for obtaining a parameter for use in the interpolation and extrapolation of a dose coefficient from the Dual Pearson data table (11), a dose coefficient interpolating/extrapolating unit (30) for expressing an ion implantation profile by linear connection of two functions respectively representing an amorphous component and a channeling component, as well as using a dose-independent moment parameter and a coefficient of linear connection dependent on dose to interpolate and extrapolate a logarithmic value of a channeling component dose coefficient with respect to logarithmic values of all dose values, and a simulation result outputting unit (40) for outputting a simulation result. <IMAGE>