| 发明名称 |
SEMICONDUCTOR DEVICE AND THE MANUFACTURING METHOD |
| 摘要 |
PURPOSE:To achieve the high operation and the high integration of MISFET burying a source area into a base plate just under a gate insulation film. |
| 申请公布号 |
JPS51148383(A) |
申请公布日期 |
1976.12.20 |
| 申请号 |
JP19750072897 |
申请日期 |
1975.06.16 |
| 申请人 |
MITSUBISHI ELECTRIC CORP |
发明人 |
NOMURA KOUJI;HIGAKI YUKIO |
| 分类号 |
H01L29/78;H01L21/336;H01L29/10 |
主分类号 |
H01L29/78 |
| 代理机构 |
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代理人 |
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| 地址 |
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