发明名称 SEMICONDUCTOR STORAGE DEVICE AND SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE
摘要 <p>PROBLEM TO BE SOLVED: To greatly increase the speed of a reading operation in a stable manner by eliminating the necessity of forcible bit line initialization for each reading cycle. SOLUTION: When the potential Vb of a bit line is higher than that of a reference voltage Vbref by precharging, the output of the comparator C1 of a comparison circuit 12 is inverted from a low signal to a high signal, outputted to the bit line potential initialization control unit 13 of a rear stage and synchronized with a clock signalϕby this bit line potential initialization control unit 13 to produce a wait signal WAIT, and ROM makes a wait request to CPU. Then, during a reading operation, an initialization signalϕDis is outputted from the bit line potential initialization control unit 3 to make a switching element 11 conductive and then the potential Vb of a bit line is initialized to a ground potential.</p>
申请公布号 JPH10233097(A) 申请公布日期 1998.09.02
申请号 JP19970036503 申请日期 1997.02.20
申请人 HITACHI LTD;HITACHI HOKKAI SEMICONDUCTOR LTD 发明人 OMIYA ATSUO
分类号 G11C16/06;(IPC1-7):G11C16/06 主分类号 G11C16/06
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