发明名称 |
Semiconductor integrated circuit comprising bipolar transistors and MOS transistors and associated fabrication method |
摘要 |
Formed on a p-type semiconductor substrate are bipolar transistors and CMOS transistors. A bipolar transistor has a base extraction electrode a side-surface of which is covered with an oxide layer, a silicon nitride layer, and a polysilicon layer. A CMOS transistor has a gate electrode a side-surface of which is covered with an oxide layer, a silicon nitride layer, and a side-wall layer. The silicon nitride layer on the side-surface of the base extraction electrode is formed by the same fabrication step that the silicon nitride layer on the side-surface of the gate electrode is formed. <IMAGE> |
申请公布号 |
EP0746032(A3) |
申请公布日期 |
1998.09.02 |
申请号 |
EP19950119739 |
申请日期 |
1995.12.14 |
申请人 |
MATSUSHITA ELECTRONICS CORPORATION |
发明人 |
SAWADA, SHIGEKI;FURATA, TAKASHI |
分类号 |
H01L21/331;H01L21/8249;H01L27/06 |
主分类号 |
H01L21/331 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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