发明名称 PRODUCTION OF OXIDE CRYSTAL
摘要 PROBLEM TO BE SOLVED: To produce an oxide crystal capable of being used as a substrate, while inhibiting the dissolution of low melting point substances such as metal silver in a solvent, by using a mixture comprising an oxide containing an element constituting the oxide crystal, a halide compound containing an element constituting the oxide crystal and metal silver as the solvent and forming the oxide crystal on a substrate by a solution growth method. SOLUTION: The crystal of an oxide such as YBa2 Cu3 O6+d is produced by a solution growth method. Therein, a mixture comprising an oxide containing at least one kind of cationic element constituting the above oxide crystal, such as a BaO-CuO mixture, a halide compound containing at least one kind of the cationic element constituting the above oxide crystal, such as BaF2 , and metal silver. The solvent preferably contains the halide compound and the metal silver in contents of 0.1-50mol.% and 0.4-11.0mol.%, respectively. The oxide crystal includes a superconductive crystal or a crystal having the same crystal structure as the same, such as a Y123 type crystal structure.
申请公布号 JPH10231121(A) 申请公布日期 1998.09.02
申请号 JP19970038009 申请日期 1997.02.21
申请人 KOKUSAI CHODENDO SANGYO GIJUTSU KENKYU CENTER;NGK INSULATORS LTD;CHUBU ELECTRIC POWER CO INC 发明人 ARAI YUSUKE;YAMADA YASUSHI;HIRABAYASHI IZUMI;KAWASHIMA JUNICHI
分类号 C01G1/00;C01G3/00;C30B7/08;C30B9/00;H01L39/24;(IPC1-7):C01G3/00 主分类号 C01G1/00
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