发明名称 Electroless copper plating method for forming integrated circuit structures
摘要 A method for fabricating a copper containing integrated circuit structure within an integrated circuit, and the copper containing integrated circuit structure formed through the method. There is first provided a substrate layer. There is then formed through a first electroless plating method a nickel containing conductor layer over the substrate layer. There is then activated the nickel containing conductor layer to form an activated nickel surface of the nickel containing conductor layer. Finally, there is then formed through a second electroless plating method a copper containing conductor layer upon the nickel containing conductor layer. Optionally, there may be formed a polysilicon layer over the substrate prior to forming the nickel containing conductor layer over the substrate, where the nickel containing conductor layer is formed upon the polysilicon layer. Optionally, there may also be formed a second nickel containing conductor layer upon the copper containing conductor layer. The method is useful in forming copper containing integrated circuit inductor structures within integrated circuits.
申请公布号 US5801100(A) 申请公布日期 1998.09.01
申请号 US19970813719 申请日期 1997.03.07
申请人 INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE 发明人 LEE, CHWAN-YING;HUANG, TZUEN-HSI
分类号 H01L21/02;H01L21/288;H01L21/768;H05K1/16;H05K3/24;H05K3/46;(IPC1-7):H01L21/44 主分类号 H01L21/02
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