| 摘要 |
The present invention relates to a lead frame for the formation of a frame structure of an integrated circuit, more particularly, to a lead frame, having a structure possessing excellent bondability, solder wettability, and Ag paste adhesion. A lead frame for a semiconductor device comprises a lead frame material; a Pd plating or a Pd alloy plating, provided on the lead frame material; and a layer as an uppermost layer formed of a Pd oxide and gold or silver. A process for producing a lead frame for a semiconductor device comprises the steps of: plating a lead frame material with Pd or a Pd alloy; flasing the surface of the Pd or Pd alloy plating with gold (Au); and heat-treating the plated lead frame material in the air to provide a thin Pd oxide layer in only a Pd portion on the surface of a diffusion layer formed of Pd and Au.
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