发明名称 |
Integrated capacitor with reduced voltage/temperature drift |
摘要 |
An integrated capacitor structure having substantially reduced temperature and voltage coefficients including a combination of conventional N-depletion and P-depletion MOS gate capacitors connected in parallel and optimized for use at low bias voltages, where both the N-depletion and P-depletion capacitor structures have substantially zero temperature coefficients in their fully depleted region of operation.
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申请公布号 |
US5801411(A) |
申请公布日期 |
1998.09.01 |
申请号 |
US19960585059 |
申请日期 |
1996.01.11 |
申请人 |
DALLAS SEMICONDUCTOR CORP. |
发明人 |
KLUGHART, KEVIN MARK |
分类号 |
H01L29/94;(IPC1-7):H03K19/12 |
主分类号 |
H01L29/94 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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