发明名称 |
Inverted field-effect device with polycrystalline silicon/germanium channel |
摘要 |
A CMOS device architecture which includes substrate-gated inverted PMOS transistors, as well as bulk NMOS. The inverted-PMOS channels are formed in a different layer from the NMOS gates, and these layers may even have different compositions. Moreover, the NMOS and inverted-PMOS devices have different gate oxide layers, so the thicknesses can be independently optimized. The drain underlap of the inverted device is defined by a patterning step, so it can be increased for high-voltage operation if desired.
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申请公布号 |
US5801396(A) |
申请公布日期 |
1998.09.01 |
申请号 |
US19950488398 |
申请日期 |
1995.06.07 |
申请人 |
STMICROELECTRONICS, INC. |
发明人 |
CHAN, TSIU CHIU;HAN, YU-PIN;GURITZ, ELMER H.;BLANCHARD, RICHARD A. |
分类号 |
H01L21/8244;H01L27/06;H01L27/092;H01L27/11;(IPC1-7):H01L29/04 |
主分类号 |
H01L21/8244 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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