Thin film transistor having a buffering pad layer for a liquid crystal display and a method for manufacturing the same

摘要

Disclosed is a thin film transistor (TFT) having a buffering pad layer and a method for manufacturing the same. This TFT is comprised of an active polysilicon pattern formed on a substrate. An oxide film is formed on the active polysilicon pattern. An intrinsic amorphous silicon pattern is formed on the oxide film and a metal pattern on the intrinsic amorphous silicon pattern. The intrinsic amorphous silicon layer serves as a buffering pad. The ion-implantation processes and heat processes are required if other types of silicon were used as a buffering pad.