摘要 |
Disclosed herein is, a method of forming a metal wiring on a semiconductor substrate dry etching a metal wiring film or a laminated structure film comprising a metal wiring film and a metal barrier film, which includes a first step of performing etching to a metal wiring film and a second dry etching step of overetching the metal wiring film or the metal barrier film under such a condition that the residence time of a gas in an etching chamber in the second dry etching step is shorter than a residence time of a gas in the first etching step.
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