Structure and fabrication of semiconductor device having merged resistive/capacitive plate and/or surface layer that provides ESD protection

摘要

A compact RC semiconductor structure suitable for integrated RC and RCD networks contains a semiconductor body (10), an overlying dielectric layer (14), and a resistive plate (16A) situated over the dielectric layer. The resistive plate constitutes both a resistor and at least part of the upper plate of a capacitor whose lower plate (12) is formed with part of the semiconductor body below the dielectric layer. A capacitive structure which provides high ESD protection is formed with a semiconductor body (10) that contains a heavily doped surface layer (12) whose sheet resistance is no more than 5 ohms/square. The surface layer constitutes the lower plate for a capacitor whose upper plate is formed with a conductive plate (16A) situated on a dielectric layer (14) overlying the semiconductor body.