Room temperature diode laser emitting in the 2-5 micrometer wavelength range

摘要

A semiconductor laser diode which emits radiation in the 2-5 micrometer wavelength range and operates at room temperature. The laser diode includes an active layer of an InxGa1-xAsySb1-y alloy and a separate cladding layer on each side of the active layer. One of the cladding layers is of n-type conductivity and the other cladding layer is of p-type conductivity. At least the n-type cladding layer, and preferably both cladding layers, are of either an InAlPSb or an InGaPSb alloy.