| 摘要 |
A field effect transistor including a gate electrode, a semiconductor region, a source electrode and a drain electrode, the source and drain electrodes being formed on opposite sides of the semiconductor region and spaced apart from the gate electrode. The semiconductor region is formed such that the source and drain electrodes are in direct contact with ends of the semiconductor region, and a channel region is formed through the semiconductor region in response to a voltage applied to the gate electrode, the channel region extending from the source electrode to the drain electrode. Junctions between the source and drain electrodes and the semiconductor region are formed as an insulated area including a schottky barrier. The source and drain electrodes either have a work function which is greater than the work function of the semiconductor region (for p-channel transistors), or a work function which is less than the work function of the semiconductor region (for n-channel transistors). A width of the semiconductor region is less than or equal to a width of the gate electrode plus two times the thickness of the insulating film.
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