发明名称 ALLOY AU WIRE FOR BONDING SEMICONDUCTOR ELEMENT
摘要 PROBLEM TO BE SOLVED: To enhance the peeling strength and breaking performance in the bonding time, by a method wherein an alloy Au wire is composed of at least one kind of specific amount of magnesium(MG), vanadium(V) and residual Au containing an inevitable impurity not exceeding a specific wt.%. SOLUTION: An alloy Au wire is composed of at least one kind of magnesium(Mg), vanadium(V) in wt.% of 0.1-20.0, residual Au and an inevitable impurity not exceeding 0.01wt.%. As for such a high purity material Au, a high purity Au containing at least one kind of Mg, V in a specific amount and the material high purity Au exceeding 99.99wt.% preferably 99.995wt.% is used. By adopting such a constitution, the loop height (H1 ) can be made higher (H2 ) suppressing the breaking rate at low level after the heat cycle, furthermore enabling the peeling strength and oscillation breaking performance to be enhanced.
申请公布号 JPH10233410(A) 申请公布日期 1998.09.02
申请号 JP19970036262 申请日期 1997.02.20
申请人 TANAKA DENSHI KOGYO KK 发明人 TAKAURA SHIN;MIMURA TOSHITAKA;MURAI HIROSHI
分类号 C22C5/02;H01L21/60 主分类号 C22C5/02
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