发明名称 Self-aligned tungsten etch back process to minimize seams in tungsten plugs
摘要 A process for creating tungsten plugs, to fill high aspect ratio contact holes, has been developed. Narrow seams in the center of a tungsten plug, are protected from the tungsten RIE etch back process, thus avoiding the creation of larger seams or voids. This is accomplished by delaying the tungsten RIE etch back step until formation of an overlying interconnect metallization structure, which will protect the underlying tungsten plug, and seam, during the subsequent tungsten RIE etch back procedure.
申请公布号 US5801096(A) 申请公布日期 1998.09.01
申请号 US19960658523 申请日期 1996.06.03
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. 发明人 LEE, CHUNG-KUANG;TSENG, PIN-NAN
分类号 H01L21/3213;H01L21/768;(IPC1-7):H01L21/441 主分类号 H01L21/3213
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