发明名称 |
Halbleiteranordnung, insbesondere Transistor |
摘要 |
A semiconductor device composed of a semiconductor body having two zones which define a pn-junction between them, which device includes, for improving the high frequency characteristics of the device, a layer of insulating material disposed within the semiconductor body and separating the two zones from one another in the region surrounding the pn-junction. |
申请公布号 |
CH470761(A) |
申请公布日期 |
1969.03.31 |
申请号 |
CH19650010887 |
申请日期 |
1965.08.03 |
申请人 |
TELEFUNKEN PATENTVERWERTUNGSGESELLSCHAFT MBH |
发明人 |
JUERGEN,DR. SCHUETZE,HANS;HENNINGS,KLAUS,DR. |
分类号 |
H01L21/00;H01L21/22;H01L21/316;H01L23/31;H01L27/082;H01L29/00;H01L29/73;(IPC1-7):H01L7/44;H01L11/06 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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