| 摘要 |
A method of manufacturing interconnect in semiconductor device comprises of the steps: (1) on one semiconductor substrate, adjacent to one first insulator supplying one conductive layer, in which the conductive layer has top surface sharing common plane with first insulator; (2) on conductive layer and top surface of first insulator depositing one etch stop layer, which is different from first insulator; (3) on etch stop layer depositing one second insulator, which is different from etch stop layer; (4) etching one via to expose part of etch stop layer, and etched via at least locally formed on conductive layer; (5) removing etch stop layer in via; (6) in via filling one conductive material.
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