ENHANCED ASIC PROCESS CELL ENHANCED ASIC PROCESS CELL

摘要

A DRAM bit storage cell comprising a pair of capacitors each having one plate connected to a source or drain of a pass FET, another plate of a first of the pair of capacitors connected to a first voltage rail or a source of voltage boosted from the voltage of the first voltage rail, and another plate of a second of the pair of capacitors connected to a voltage rail opposite in polarity to the first voltage rail.