发明名称 Phase shift mask used in photolithography
摘要 Phase shift mask comprises (a) a substrate (1) permeable to irradiated light, and (b) a phase shift section (20) formed in a predetermined region on the substrate which changes the phase angle of the irradiated light by approximately 180 deg and which has a permeability of 3-20% for the irradiated light. The phase shift section has a monolayer film (4) made of an homogeneous material, and a permeable layer (10) whose permeability is less dependent on wavelength when it is used in combination with the monolayer film. Prodn. of the mask is also claimed.
申请公布号 DE4447646(C2) 申请公布日期 1998.08.27
申请号 DE19944447646 申请日期 1994.10.06
申请人 DAINIPPON PRINTING CO., LTD., TOKIO/TOKYO, JP;ULVAC COATING CORP., CHICHIBU, SAITAMA, JP;MITSUBISHI DENKI K.K., TOKIO/TOKYO, JP 发明人 ISAO, AKIHIKO, CHICHIBU, SAITAMA, JP;KAWADA, SUSUMU, CHICHIBU, SAITAMA, JP;YOSHIOKA, NOBUYUKI, ITAMI, HYOGO, JP
分类号 G03F1/00;(IPC1-7):G03F1/14 主分类号 G03F1/00
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