Long wavelength light emitting vertical cavity surface emitting laser and method of fabrication

摘要

A longwavelength vertical cavity surface emitting laser (VCSEL) (40) for use in optical telecommunications and method of fabrication that includes the fabrication of an active VCSEL structure (20) on a supporting substrate (22) and the fabrication of a highly reflective DBR mirror structure (10) on a silicon substrate (12). The DBR mirror structure (10) includes alternating layers (14, 16) of a silicon oxide material and a silicon material fabricated utilizing epitaxially growth techniques and/or wafer bonding using SOI wafer fusion technology. During fabrication of the final VCSEL device (40), the Si/SiO2 DBR mirror structure (10) is wafer bonded to the active VCSEL structure (20). The active VCSEL structure (20) supporting substrate (22, 24, 26) is selectively removed, to enable positioning of a second DBR mirror stack (42). The final VCSEL device si (40) characterized by emitting infra-red light. <IMAGE>