发明名称 |
Composition and method for the formation of silica thin films |
摘要 |
<p>The claimed invention pertains to a composition that forms silica thin films, wherein said composition performs well as a planarizing coating when applied to a substrate and is subsequently converted by exposure to high-energy radiation. The resultant silica thin films have excellent electrical insulating performance. Said composition comprises (A) a hydrogen silsesquioxane resin that contains at least 45 weight % of a hydrogen silsesquioxane resin with a molecular weight no greater than 1,500; and (B) solvent. A silica thin film is produced by evaporating the solvent (B), and then converting at least a portion of the hydrogen silsesquioxane resin (A) to silica by exposing coated substrate to high-energy radiation. The preferred substrate is a semiconductor substrate having at least one electrically conductive layer.</p> |
申请公布号 |
EP0860462(A2) |
申请公布日期 |
1998.08.26 |
申请号 |
EP19980102981 |
申请日期 |
1998.02.20 |
申请人 |
DOW CORNING TORAY SILICONE COMPANY LIMITED |
发明人 |
KOBAYASHI, AKIHIKO;MINE, KATSUTISHI;NAKAMURA, TAKASHI;SASAKI, MOTOSHI;SAWA, KIYOTAKA |
分类号 |
C08G77/12;C09D183/04;H01L21/316;(IPC1-7):C08G77/12 |
主分类号 |
C08G77/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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