Method for cleaning a semiconductor surface

摘要

In a method for cleaning a group III-nitride-based semiconductor surface prior to depositing electrodes or growing additional layers of semiconductor, the surface of the semiconductor is brought into contact with an etchant solution that includes hydrofluoric acid. The etching step is preferably carried out at a HF concentration greater than 5% and at a temperature between 10-100 DEG C in an inert atmosphere. The etchant solution may also include other acids. Group III-nitride semiconductor devices cleaned in this manner exhibit require driving voltages than devices cleaned with prior art methods.