PROCESS FOR REDUCING DEFECTS IN OXIDE LAYERS ON SILICON CARBIDE,申请号EP19960939506-传众专利搜索

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发明名称	PROCESS FOR REDUCING DEFECTS IN OXIDE LAYERS ON SILICON CARBIDE
摘要
申请公布号	EP0860026(A1)	申请公布日期	1998.08.26
申请号	EP19960939506	申请日期	1996.10.28
申请人	CREE RESEARCH, INC.	发明人	LIPKIN, LORI, A.;SLATER, DAVID, B., JR.;PALMOUR, JOHN, W.
分类号	H01L29/78;H01L21/04;H01L21/316;(IPC1-7):H01L29/24;H01L21/02	主分类号	H01L29/78
代理机构		代理人
主权项
地址

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