| 发明名称 |
Method for treating a dielectric used in semiconductor devices |
| 摘要 |
<p>In one embodiment, the present invention provides a method of treating a dielectric layer 24. First, the dielectric layer is heated while being subjected to an O2 plasma. After that, the dielectric layer is heated while being subject to an ozone environment. This method can be useful in forming a capacitor 12 dielectric 24. In turn, the capacitor could be used in a DRAM memory device. <IMAGE></p> |
| 申请公布号 |
EP0860868(A2) |
申请公布日期 |
1998.08.26 |
| 申请号 |
EP19980300746 |
申请日期 |
1998.02.02 |
| 申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
TSU, ROBERT;IIJIMA, SHIMPEI;ISAMU, ASANO;MASATO, KUNITOMO;TAMARU, TSUYOSHI;WILLIAM R., MCKEE |
| 分类号 |
H01L27/108;H01L21/02;H01L21/8242;H01L21/314;(IPC1-7):H01L21/310;H01L21/320 |
主分类号 |
H01L27/108 |
| 代理机构 |
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| 主权项 |
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