| 摘要 |
PROBLEM TO BE SOLVED: To reduce displacement between transferred patterns, even when the patterns are not transferred faithfully due to a proximity effect of light. SOLUTION: A method of manufacturing semiconductor device includes at least a process for forming a first transfer pattern 23, corresponding to a first mask pattern 21 by radiating electromagnetic waves or charged particles through a first mask plate carrying the mask pattern 21 and another process for forming the second transfer pattern 24, corresponding to a second mask pattern 22 by radiating electromagnetic waves or charged particles through a second mask plate, carrying the second mask pattern 22. The position of the second mask pattern 22 is corrected, in advance, in a certain stage between the designing process of the semiconductor device and the second mask pattern 22 forming process correspondingly to the transfer error of the first transfer pattern 23 to the first mask pattern 21. |
