发明名称 |
Masks for charged-particle beam microlithography |
摘要 |
Charged-particle beam masks are disclosed that comprise a plurality of mask subfields separated by a plurality of boundary regions. The subfields are formed in a scattering layer deposited on a membrane. The membrane is supported by a support structure provided in proximity to the boundary regions. In one embodiment, the support structure comprises a plurality of support beams, parallel to each other, and preferably formed by anisotropically etching a silicon wafer. A boron-doped layer of the silicon wafer forms the membrane.
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申请公布号 |
US5798194(A) |
申请公布日期 |
1998.08.25 |
申请号 |
US19970858770 |
申请日期 |
1997.05.19 |
申请人 |
NIKON CORPORATION |
发明人 |
NAKASUJI, MAMORU;KAWATA, SHINTARO |
分类号 |
G03F1/14;G03F1/16;G03F7/20;(IPC1-7):G03F9/00 |
主分类号 |
G03F1/14 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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