发明名称 Masks for charged-particle beam microlithography
摘要 Charged-particle beam masks are disclosed that comprise a plurality of mask subfields separated by a plurality of boundary regions. The subfields are formed in a scattering layer deposited on a membrane. The membrane is supported by a support structure provided in proximity to the boundary regions. In one embodiment, the support structure comprises a plurality of support beams, parallel to each other, and preferably formed by anisotropically etching a silicon wafer. A boron-doped layer of the silicon wafer forms the membrane.
申请公布号 US5798194(A) 申请公布日期 1998.08.25
申请号 US19970858770 申请日期 1997.05.19
申请人 NIKON CORPORATION 发明人 NAKASUJI, MAMORU;KAWATA, SHINTARO
分类号 G03F1/14;G03F1/16;G03F7/20;(IPC1-7):G03F9/00 主分类号 G03F1/14
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