| 摘要 |
PROBLEM TO BE SOLVED: To lessen the necessary area of a semiconductor device and to increase the resistance of the device to a soft error, by a method wherein at least the two conductive films adjacent to each other out of a plurality of conductive films are connected with each other through a connection hole opened in an insulating film, and at the same time, the two conductive films are formed into the same plane shape. SOLUTION: A second layer conductive film 20, a first layer interlayer insulating film 11 and a first layer conductive film 10 are simultaneously patterned in such a way as to include necessary interlayer connections to form the films 20, 11 and 10 into the same plane shape. Owing to this, a superposition allowance of a mask becomes unnecessary and the longitudinal and lateral lengths of the dimension of a memory cell can be respectively reduced. Moreover, after openings are simultaneously formed in the films 11 and 10 and a gate oxide film 4 to form connection holes 12a and 12b, a polycrystalline silicon film or the like is deposited as the film 20, and the films 20 and 11 are respectively connected with nodes N1 and N2. As a result, the resistance of a semiconductor divice to αrays and neutrons can be increased. |
