| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor memory in which an average access time can be shortened suppressing increasing a chip area as much as possible. SOLUTION: This device is provided with a page address storage section 11 storing a first page address corresponding to data held in a sense amplifier SA and a second page address corresponding to data held in a latch circuit LTH. When a page address comparing section 12 outputs a coincidence signal indicating coincidence between an inputted page address and the first or the second page address, a switch circuit SW selects one side of data held in the sense amplifier SA or the latch circuit LTH and outputs it to a selector circuit SEL in accordance with the coincidence signal.</p> |
